At the China International Power Exhibition, Infineon recently launched the next-generation CoolMOS MOSFET 600V CoolMOS C6 series
Design more efficient, compact, lightweight,
The CoolMOS C6 device can reduce design difficulty and is highly suitable for various energy-efficient applications,
Recently, the Institute of Microelectronics of the Chinese Academy of Sciences has successfully developed the first ZnO nanorod field-effect transistor in China using independently developed new technology.
Recently, the Institute of Microelectronics of the Chinese Academy of Sciences has successfully developed the first ZnO nanorod field-effect transistor in China using independently developed new technology.
In recent years, organic field-effect transistors have attracted attention from both academia and industry due to their potential applications in large-area,
